We have successfully manufactured nanometer-sized FETs using a few-layer Molybdenum Ditelluride (MoTe2) and conducted a detailed examination of their optoelectronic properties. Specifically, our investigation delves into the mechanisms governing photocurrent generation in MoTe2 FETs through gate and bias-dependent measurements. The findings highlight distinct photocurrent signals at MoTe2-electrode junctions, indicating the presence of a gain photoconductor effect in both off- and on-states. This stands in contrast to conventional MoTe2 field-effect non-volatile transistors, which exhibit a continuous increase in photocurrent unaffected by the back-gate voltage. These results hold significance for the development of directional-dependent FETs based on MoTe2 crystals.